SCS120KG - ROHM

SCS120KG SiC Schottky Barrier Diode

SCS120KG SiC Schottky Barrier Diode VR 1200V IF 20A QC 70nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Construction Silicon carbide epitaxial planer type Outline TO-220AC Datasheet (1) Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) Packaging specifications Packaging Ree.

Features

1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
Construction Silicon carbide epitaxial planer type
Outline TO-220AC Datasheet (1)
Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3)
Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 - SCS120KG
Absolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward curr.