BAT54XV2T1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com • Extre.
http://onsemi.com
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES
1 CATHODE 2 ANODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse Voltage Symbol VR Value 30 Unit V 1
2
SOD−523 CASE 502 PLASTIC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Bo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SBAT54AWT1G |
ON Semiconductor |
Schottky Barrier Diodes | |
2 | SBAT54CLT1G |
ON Semiconductor |
Dual Common Cathode Schottky Barrier Diodes | |
3 | SBAT54CWT1G |
ON Semiconductor |
Dual Series Schottky Barrier Diodes | |
4 | SBAT54SLT1G |
ON Semiconductor |
Dual Series Schottky Barrier Diodes | |
5 | SBAT54T1G |
ON Semiconductor |
Schottky Barrier Diodes | |
6 | SBA-4086 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
7 | SBA-4086Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
8 | SBA-4089 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
9 | SBA-4089Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
10 | SBA-5089 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
11 | SBA-5089Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
12 | SBA0520Q |
Pan Jit International |
EXTREME LOW VF SCHOTTKY RECTIFIER |