BAT54CLT1G, SBAT54CLT1G Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Fea.
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage Forward Power Dissipation
@ TA = 25C Derate above 25C
VR 30 V PF 225 mW
1.8 mW/C
Thermal Resistance (Note 1) Junction-to-Ambient (Note 2)
RqJA
508 C/W 311
Forward Current (DC) Non−Repetitive Peak .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SBAT54CWT1G |
ON Semiconductor |
Dual Series Schottky Barrier Diodes | |
2 | SBAT54AWT1G |
ON Semiconductor |
Schottky Barrier Diodes | |
3 | SBAT54SLT1G |
ON Semiconductor |
Dual Series Schottky Barrier Diodes | |
4 | SBAT54T1G |
ON Semiconductor |
Schottky Barrier Diodes | |
5 | SBAT54XV2T1G |
ON Semiconductor |
Schottky Barrier Diodes | |
6 | SBA-4086 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
7 | SBA-4086Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
8 | SBA-4089 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
9 | SBA-4089Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
10 | SBA-5089 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
11 | SBA-5089Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
12 | SBA0520Q |
Pan Jit International |
EXTREME LOW VF SCHOTTKY RECTIFIER |