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Ordering number:EN3868 SB30-03P Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1244 [SB30-03P] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage cu.
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to highly reliable planar structure.
A:Anode C:Cathode SANYO:PCP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 30 35 3 10
–55 to +125
–55 to +125 Unit V V A A
˚C ˚C
Electrical Characteristics.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SB30-03F |
Sanyo Semicon Device |
30V/ 3A Rectifier |
|
| 2 | SB30-03T |
Sanyo Semicon Device |
30V/ 3A Rectifier |
|
| 3 | SB30-03Z |
Sanyo Semicon Device |
30V/ 3A Rectifier |
|
| 4 | SB30-04A |
Sanyo Semicon Device |
40V/ 3.0A Rectifier |
|
| 5 | SB30-09 |
Sanyo Semicon Device |
90V/ 3A Rectifier |
|
| 6 | SB30-09J |
Sanyo Semicon Device |
90V/ 3A Rectifier |
|
| 7 | SB30-100AM |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
|
| 8 | SB30-100MA |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
|
| 9 | SB30-100RM |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
|
| 10 | SB30-18 |
Sanyo Semicon Device |
180V/ 3A Rectifier |
|
| 11 | SB30-40-258AM |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS |
|
| 12 | SB30-40-258M |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS |
|