Ordering number:EN2998 SB30-03F Schottky Barrier Diode 30V, 3A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1200 [SB30-03F] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reli.
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to highly reliable planar structure.
A:Anode C:Cathode SANYO:TO-126LP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings 30 35 Unit V V A A
50Hz, resistive load, Tc=114˚C
50Hz sine wave, 1 cycle
3 30
–55 to +125
–55 to +.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SB30-03P |
Sanyo Semicon Device |
30V/ 3A Rectifier | |
2 | SB30-03T |
Sanyo Semicon Device |
30V/ 3A Rectifier | |
3 | SB30-03Z |
Sanyo Semicon Device |
30V/ 3A Rectifier | |
4 | SB30-04A |
Sanyo Semicon Device |
40V/ 3.0A Rectifier | |
5 | SB30-09 |
Sanyo Semicon Device |
90V/ 3A Rectifier | |
6 | SB30-09J |
Sanyo Semicon Device |
90V/ 3A Rectifier | |
7 | SB30-100AM |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS | |
8 | SB30-100MA |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS | |
9 | SB30-100RM |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS | |
10 | SB30-18 |
Sanyo Semicon Device |
180V/ 3A Rectifier | |
11 | SB30-40-258AM |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS | |
12 | SB30-40-258M |
Seme LAB |
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS |