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S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown volt.
Die Size 0.44
*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V
PNP EPITAXIAL SILICON TRANSISTORS
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltage voltage
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1）
Test conditions
Ic= 100µA , IE=0 Ic= 1 mA，IB=0 IE= 100µA，IC=0 VCB= 30V , IE=0 VEB= 5V，IC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V
MIN
30 21 5.0
TYP
MAX
UNIT
V V .
S8550LT1 - Tuofeng Semiconductor
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S8550LT1 TRANSISTOR (PNP) FEA.
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|---|---|---|---|---|
| 1 | S8550 |
JIEJIE |
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| 2 | S8550 |
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| 3 | S8550 |
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| 4 | S8550 |
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| 5 | S8550 |
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| 6 | S8550 |
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| 7 | S8550 |
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| 8 | S8550 |
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| 10 | S8550 |
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| 12 | S8550 |
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