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Features
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Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V
PNP EPITAXIAL SILICON TRANSISTORS
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltage voltage
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1）
Test conditions
Ic= 100µA , IE=0 Ic= 1 mA，IB=0 IE= 100µA，IC=0 VCB= 30V , IE=0 VEB= 5V，IC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V
MIN
30 21 5.0
TYP
MAX
UNIT
V V ...
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S8550LT1 Data Sheet
