The S7T3236T4M, S7T3218T4M and S7T3209T4M are 37,748,736-bits Quadruple Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for S7T3236T4M, 2,097,152 words by 18bits for S7T3218T4M and 4,194,304 words by 9bits for S7T3209T4M. The Quadruple operation is possible by supporting DDR read and write operations through separate data o.
Key Parameters
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future fre-
quency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/
Part Number
Org.
Freq. (MHz)
Cycle Access Time Time RoHS (ns) (ns)
-0.1V for 1.8V I/O.
• Separate independent read and write data ports
with concurrent read and write operation
S7T3236T4M-E(F)C(I)45 x36 450
2.2
0.45
Ο
S7T3236T4M-E(F)C(I)40
400 2.5 0.45 Ο
• HSTL I/O
• Full data coherency, providing most current data.
• Synchronous pipeline read with self timed late write
• Read latency : 2 clo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S7T3209U4M |
NETSOL |
1Mx36 & 2Mx18 & 4Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
2 | S7T3218T4M |
NETSOL |
1Mx36 & 2Mx18 & 4Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
3 | S7T3218U4M |
NETSOL |
1Mx36 & 2Mx18 & 4Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
4 | S7T3236T4M |
NETSOL |
1Mx36 & 2Mx18 & 4Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
5 | S7T3236U4M |
NETSOL |
1Mx36 & 2Mx18 & 4Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
6 | S7T1609U4M |
NETSOL |
512Kx36 & 1Mx18 & 2Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
7 | S7T1618U4M |
NETSOL |
512Kx36 & 1Mx18 & 2Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
8 | S7T1636U4M |
NETSOL |
512Kx36 & 1Mx18 & 2Mx9 Quadruple-II+ BL4 SRAM w/ ODT | |
9 | S7T4409T2M |
NETSOL |
144Mb Quadruple-II+ BL2 w/ ODT SRAM | |
10 | S7T4418T2M |
NETSOL |
144Mb Quadruple-II+ BL2 w/ ODT SRAM | |
11 | S7T4418U4M |
NETSOL |
144Mb Quadruple-II+ BL4 w/ ODT SRAM | |
12 | S7T4436T2M |
NETSOL |
144Mb Quadruple-II+ BL2 w/ ODT SRAM |