S7B323635M - NETSOL

S7B323635M 1Mx36 & 2Mx18 Flow-Trough SRAM

The S7B323635M and S7B321835M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance applications; GW, BW, LBO, ZZ. Write cycles are internally self-tim.

Features

• VDD = 1.8V (1.7V ~ 2.0V) or 2.5V (2.3V ~ 2.7V) or 3.3V (3.1V ~ 3.5V) Power Supply
• VDDQ = 1.7V ~ 2.0V I/O Power Supply (VDD=1.8V) or 2.3V ~ 2.7V I/O Power Supply (VDD=2.5V) or 2.3V ~ 3.5V I/O Power Supply (VDD=3.3V)
• Synchronous Operation
• Self-Timed Write Cycle
• On-Chip Address Counter and Control Registers
• Byte Writable Function
• Global Write Enable Controls a full bus-width write
• Power Down State via ZZ Signal
• LBO Pin allows a choice of either a interleaved burst or a lin- ear burst
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP
• Asynchro.