The S7B163635M and S7B161835M are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance applications; GW, BW, LBO, ZZ. Write cycles are internally self-t.
• VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
• VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or
2.3V~3.5V I/O Power Supply (VDD=3.3V)
• Synchronous Operation
• Self-Timed Write Cycle
• On-Chip Address Counter and Control Registers
• Byte Writable Function
• Global Write Enable Controls a full bus-width write
• Power Down State via ZZ Signal
• LBO Pin allows a choice of either a interleaved burst or a lin-
ear burst
• Three Chip Enables for simple depth expansion with No Data
Contention only for TQFP
• Asynchronous Output Enable Control
• ADSP, ADSC, ADV Burst Control Pins
• TTL-L.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S7B161835M |
NETSOL |
512Kx36 & 1Mx18 Flow-Through SRAM | |
2 | S7B-EH |
JST |
Disconnectable Crimp-style connectors | |
3 | S7B-PH |
JST |
Disconnectable Crimp-style connectors | |
4 | S7B321835M |
NETSOL |
1Mx36 & 2Mx18 Flow-Trough SRAM | |
5 | S7B323635M |
NETSOL |
1Mx36 & 2Mx18 Flow-Trough SRAM | |
6 | S7B401835M |
NETSOL |
128Kx36 & 256Kx18 Flow-Through SRAM | |
7 | S7B403635M |
NETSOL |
128Kx36 & 256Kx18 Flow-Through SRAM | |
8 | S7B641835M |
NETSOL |
2Mx36 & 4Mx18 Flow-Trough SRAM | |
9 | S7B643635M |
NETSOL |
2Mx36 & 4Mx18 Flow-Trough SRAM | |
10 | S7B801835M |
NETSOL |
256Kx36 & 512Kx18 Flow-Through SRAM | |
11 | S7B803635M |
NETSOL |
256Kx36 & 512Kx18 Flow-Through SRAM | |
12 | S70FL01GS |
Cypress Semiconductor |
1 Gbit (128 Mbyte) 3.0V SPI Flash |