The Cypress S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effec.
512 bytes
■ Single word and multiple program on same word options
■ Automatic Error Checking and Correction (ECC) — internal hardware ECC with single bit error correction
■ Sector Erase
❐ Uniform 128-KB sectors
■ Suspend and Resume commands for Program and Erase operations
■ Status Register, Data Polling, and Ready/Busy pin methods to determine device status
■ Advanced Sector Protection (ASP)
❐ Volatile and non-volatile protection methods for each sector
■ Separate 2048-byte One-Time Program (OTP) array
❐ Four lockable regions (SSR0 - SSR3)
❐ SSR0 is Factory Locked
❐ SSR3 is Password Read Pro.
The S29GL01GT/512T are MIRRORBIT™ flash products fabricated on 45-nm process technology. These devices offer a fast page.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S29GL512N |
Cypress Semiconductor |
3.0V single power flash memory | |
2 | S29GL512N |
SPANSION |
Page Mode Flash Memory | |
3 | S29GL512P |
SPANSION |
Page Mode Flash Memory | |
4 | S29GL512P |
Cypress Semiconductor |
Page Flash | |
5 | S29GL512S |
Cypress Semiconductor |
3.0V GL-S Flash Memory | |
6 | S29GL512S |
Infineon |
512Mb Flash Memory | |
7 | S29GL-N |
SPANSION |
Page Mode Flash Memory | |
8 | S29GL-P |
SPANSION |
Page Mode Flash Memory | |
9 | S29GL016A |
SPANSION |
16 Megabit 3.0-Volt only Page Mode Flash Memory | |
10 | S29GL01GP |
SPANSION |
Page Mode Flash Memory | |
11 | S29GL01GP |
Cypress Semiconductor |
Page Flash | |
12 | S29GL01GS |
Cypress Semiconductor |
3.0V GL-S Flash Memory |