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S29GL512T - Cypress Semiconductor

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S29GL512T MirrorBit Eclipse Flash Memory

The Cypress S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effec.

Features

512 bytes
■ Single word and multiple program on same word options
■ Automatic Error Checking and Correction (ECC) — internal hardware ECC with single bit error correction
■ Sector Erase
❐ Uniform 128-KB sectors
■ Suspend and Resume commands for Program and Erase operations
■ Status Register, Data Polling, and Ready/Busy pin methods to determine device status
■ Advanced Sector Protection (ASP)
❐ Volatile and non-volatile protection methods for each sector
■ Separate 2048-byte One-Time Program (OTP) array
❐ Four lockable regions (SSR0 - SSR3)
❐ SSR0 is Factory Locked
❐ SSR3 is Password Read Pro.

The same part from a different manufacturer

Datasheet S29GL512T - Infineon S29GL512T

The S29GL01GT/512T are MIRRORBIT™ flash products fabricated on 45-nm process technology. These devices offer a fast page.

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