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The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster .
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S29GL01GS - Infineon
The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. These devices of.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S29GL01GP |
SPANSION |
Page Mode Flash Memory |
|
| 2 | S29GL01GP |
Cypress Semiconductor |
Page Flash |
|
| 3 | S29GL01GT |
Cypress Semiconductor |
MirrorBit Eclipse Flash Memory |
|
| 4 | S29GL01GT |
Infineon |
1Gb (128MB) GL-T Flash |
|
| 5 | S29GL016A |
SPANSION |
16 Megabit 3.0-Volt only Page Mode Flash Memory |
|
| 6 | S29GL032A |
SPANSION |
32 Megabit 3.0-Volt only Page Mode Flash Memory |
|
| 7 | S29GL032M |
SPANSION |
3.0V single power Flash memory |
|
| 8 | S29GL032N |
Cypress Semiconductor |
3V Page Mode MirrorBit Flash |
|
| 9 | S29GL032N |
SPANSION |
(S29GLxxxN) 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
|
| 10 | S29GL064A |
SPANSION |
64 Megabit 3.0-Volt only Page Mode Flash Memory |
|
| 11 | S29GL064M |
SPANSION |
3.0V single power Flash memory |
|
| 12 | S29GL064N |
Cypress Semiconductor |
3V Page Mode MirrorBit Flash |
|