S20VT60 Bridge Diodes 600V, 20A Feature Faston Terminal Pb free terminal RoHS:Yes OUTLINE Package (House Name): SVT Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Average forward current Surge forward current Current squared time Dielectric s.
R Rth(j-c) IF=7A, Pulse measurement, per diode VR=600V, Pulse measurement, per diode Junction to case ※︓See the original Specifications Ratings MIN TYP MAX 1.05 10 0.55 Unit V μA ℃/W Shindengen Electric Manufacturing Co., Ltd. 2/5 S20VT60_Rev.01(2020.01) CHARACTERISTIC DIAGRAMS Shindengen Electric Manufacturing Co., Ltd. 3/5 S20VT60_Rev.01(2020.01) Outline Dimensions unit:mm Shindengen Electric Manufacturing Co., Ltd. 4/5 S20VT60_Rev.01(2020.01) Notes 1. If you wish to use any such product, please be sure to refer to the specifications issued by Shindengen. 2. All products descri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S20VT80 |
Shindengen |
Bridge Diodes | |
2 | S20VTA60 |
Shindengen |
Bridge Diodes | |
3 | S20VTA80 |
Shindengen |
Bridge Diodes | |
4 | S20 |
Microsemi Corporation |
Silicon Power Rectifier | |
5 | S2000 |
Toshiba |
Silicon NPN Transistor | |
6 | S2000 |
INCHANGE |
NPN Transistor | |
7 | S2000 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | S2000A |
Toshiba |
Silicon NPN Transistor | |
9 | S2000A |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | S2000AF |
ST Microelectronics |
High voltage NPN Power transistor | |
11 | S2000AF |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | S2000AF1 |
SavantIC |
SILICON POWER TRANSISTOR |