S1423 - Toshiba

S1423 Silicon PNP Transistor

) ; SILICON PNP EPITAXIAL TYPE (PCT PROCESS) GENERAL PURPOSE AMPLIFIER AMPLIFIER APPLICATIONS. AND LOW NOISE FEATURES: - Excellent hFE Linearity : hFE (0.1mA) hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1420(hFE =70 700 . Small Collector Output Capacitance: C ob =4. 5pF(Max. S1423 Unit in MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC Coll.

Features

- Excellent hFE Linearity : hFE (0.1mA) hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1420(hFE =70 700 . Small Collector Output Capacitance: C ob =4. 5pF(Max. S1423 Unit in MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collect or Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBi. Jc IB PC stg RATING -40 -40 -200 -200 625 150 -55-150 UNIT mA mA mV ~°C~ 1. EMITTER 2. BASE 3. COLLECTOR JEDEC 2 —5 F 1 P Weight : 0.21g ELECTRICAL CHARACTERISTICS.