S1420 - Toshiba

S1420 Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . Excellent hpE Linearity : h KE (0. lmA)/hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1423(hFE =70~400; . Small Collector Output Capacitance: C ob =3. 5pF(Max. S1420 l Tnit in mm MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC Collecto.

Features

. Excellent hpE Linearity : h KE (0. lmA)/hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1423(hFE =70~400; . Small Collector Output Capacitance: C ob =3. 5pF(Max. S1420 l Tnit in mm MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO v EBO PC Tstg RATING 60 60 I.NIT V 1. EMITTER 2. BASE 3. COLLECTOR 200 mA 200 mA 625 mW 150 °C -55-150 JEDEC EIAJ TOSHIBA TO—9 8 SC-43 2-5F1 Weight : 0.2.