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S-LBAS16WT1G |
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| Part Number | S-LBAS16WT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring U... |
| Features |
orward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA)
Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C)
Capacitance (VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3)
Symbol VF
IR
CD trr QS VFR
LBAS16WT1G S-LBAS16WT1G
3
1 2
SC-70
3 CATHODE
1 ANODE
Min Max Unit
mV — 715 — 855 — 1000 — 1250
µA — 1.0 — 50 — 30
— 2.0 pF
— 6.0 ns
— 45 PC
— 1.75
V
ORDERING INFORMATION
Device
Marking
LBAS16W... |
| Document |
 S-LBAS16WT1G Data Sheet
PDF 113.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S-LBAS16LT1G |
LRC |
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| 2 | S-LBAS20HT1G |
LRC |
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| 3 | S-LBAS316T1G |
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High speed diode |
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| 4 | S-LBAS40BST5G |
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SCHOTTKY BARRIER DIODE |
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| 5 | S-LBAS516T1G |
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High-speed Diode |
|