S-L2SA1365ELT1G - Leshan Radio Company

S-L2SA1365ELT1G General Purpose Transistor

L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz ty.

Features

j Junction temperature Tstg Storage temperature Ratings -25 -20 -4 -7 00 150 ＋125 -55～＋125 Unit V V V mA mW ℃ ℃ 3 COLLECTOR 1 BASE ORDERING INFORMATION 2 EMITTER Device Marking L2SA1365ELT1G S-L2SA1365ELT1G L2SA1365ELT3G S-L2SA1365ELT3G L2SA1365FLT1G S-L2SA1365FLT1G L2SA1365FLT3G S-L2SA1365FLT3G L2SA1365GLT1G S-L2SA1365GLT1G L2SA1365GLT3G S-L2SA1365GLT3G AE AE AF AF AG AG Shipping 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter C to B break down voltage E to B break down voltage C.