RT3WLMM - Isahaya Electronics Corporation

RT3WLMM Transistor

RT3WLMM is a composite transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.13 0.2 0.9 0.65 0～0.1 TERMINAL CONNECTOR ①：E.

Features

fy Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter V(BR)CEO ICBO IEBO hFE
* hFE VCE(sat) fT Cob Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance NF Noise figure
* : It shows hFE classification in right table. Test conditions IC=100μA,RBE=∞ VCB =50V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=0.1mA IC=100mA,IB=10mA VCE=6V,IE=-10mA (Tr1) VCB=6V,IE=0,f=1MHZ (Tr2) VCB=-6V,IE=.