RN6006 - Toshiba Semiconductor

RN6006 Silicon NPN Transistor

RN6006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6006 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = 1~2W (mounted on ceramic substrate) l Complementary to.

Features

cs (Ta = 25°C) Characteristic Collector cut-offcurrent Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Resistor Symbol ICBO IEBO V(BR)CES hFE (1) hFE (2) VCE (sat) fT Cob R Test Circuit ― ― ― ― ― ― ― ― Test Condition VCB = −10V, IE = 0 VEB = −6V, IC = 0 IC = −1mA VCE = −1V, IC = −0.5A VCE = −1V, IC = −4.0A IC = −2A, IB = −0.05A VCE = −1V, IC = −0.5A VCB = −10V, IE = 0, f = 1 MHz ― Min ― −0.462 −10 160 60 ― ― ― 7 Typ. ― −0.60 ― ― ― ― 140 55 10 Max −0.1 −0.857 ― 600 ― −0.5 ― ― 13 Un.