RN6001 - Toshiba Semiconductor

RN6001 Silicon NPN Transistor

RN6001 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = 1~2W (mounted on ceramic substrate) l Complementary to.

Features

current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Resistor Symbol ICBO IEBO V(BR)CES hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob R Test Circuit ― ― ― ― ― ― ― ― ― Test Condition VCB = −30V, IE = 0 VEB = −5V, IC = 0 IC = −10mA VCE = −2V, IC = −0.5A VCE = −2V, IC = −2.0A IC = −1A, IB = −0.05A IC = −1A, IB = −0.05A VCE = −2V, IC = −0.5A VCB = −10V, IE = 0, f = 1 MHz ― Min ― −1.92 −30 100 50 ― ― ― ― 1.4 Typ. ― −2.5 ― ― ― ― ― 120 40 2.0 Max −0.1 −3.57 ― 320 ― −0.5 .