Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PIN diode RN242CS zApplications High frequency switching zDimensions (Unit : mm) zLead size figure (Unit : mm) 0.55 0.45 0.45 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance zConstruction Silicon epitaxial planer zTaping dimensions (Unit : mm) VMN2 zStructure zAbsolute maximum ratings (Ta=25°C) Para.
1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance zConstruction Silicon epitaxial planer zTaping dimensions (Unit : mm) VMN2 zStructure zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage(DC) Forward current Junction temperature VR IF Tj Storage temperature Tstg Limits 30 100 150 -55 to +150 Unit V mA °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF - - 1 IR - - 0.1 Ct - - 0.35 High frequency resistance Rf - - 3 - - 1.5 Unit Conditi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN2421 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 2 | RN2422 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 3 | RN2423 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 4 | RN2424 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 5 | RN2425 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 6 | RN2426 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 7 | RN2427 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 8 | RN2401 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 9 | RN2402 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 10 | RN2403 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 11 | RN2404 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 12 | RN2405 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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