RN2422 - Toshiba

RN2422 Silicon PNP Epitaxial Type Transistor

RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce .

Features

RN2421 to 2427 VCBO VCEO VEBO Ic Pc Tj Tstg −50 V −50 V −10 −5 V −6 −800 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derat.