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RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias.
(Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN1701JE to 1706JE Emitter-base voltage RN1701JE to 1704JE RN1705JE RN1706JE Collector current Collector power dissipation RN1701JE Junction temperature to 1706JE Storage temperature range Symbol Rating Unit VCBO VCEO 50 V 50 V VEBO 10 V 5 IC 100 mA PC (Note 1) 100 mW Tj 150 °C Tstg −55 to 150 °C Equivalent Circuit (top view) 5 4 Q1 Q2 123 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in tempera.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1704 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 2 | RN1701 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1701JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1702 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1702JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 6 | RN1703 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 7 | RN1703JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 8 | RN1705 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 9 | RN1705JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 10 | RN1706 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 11 | RN1706JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 12 | RN1707 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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