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RN1701 to RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1701, RN1702, RN1703 RN1704, RN1705, RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors. Simplify circuit design .
ng
Unit
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN1701 to 1706 RN1701 to 1704 RN1705, 1706
RN1701 to 1706
VCBO VCEO
VEBO
IC PC
* Tj Tstg
50
V
50
V
10 V
5
100
mA
200
mW
150
°C
−55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1701 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1701JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1702 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1702JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1703JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 6 | RN1704 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 7 | RN1704JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 8 | RN1705 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 9 | RN1705JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 10 | RN1706 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 11 | RN1706JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 12 | RN1707 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|