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RN1107 to RN1109 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1107/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts requi.
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2107 to 2109 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990-12 2021-08-30 Rev.1.0 5. Packaging and Pin .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1101 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1101MFV |
Toshiba |
Silicon NPN Transistor |
|
| 3 | RN1102 |
California Micro Devices Corp |
Isolated Resistor Termination Network |
|
| 4 | RN1102 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1102MFV |
Toshiba |
Silicon NPN Transistor |
|
| 6 | RN1103 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 7 | RN1103MFV |
Toshiba |
Silicon NPN Transistor |
|
| 8 | RN1104 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 9 | RN1104MFV |
Toshiba |
Silicon NPN Transistor |
|
| 10 | RN1105 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 11 | RN1105MFV |
Toshiba |
Silicon NPN Transistor |
|
| 12 | RN1106 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|