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RN1101 to RN1106 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external pa.
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2101 to RN2106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1101MFV |
Toshiba |
Silicon NPN Transistor |
|
| 2 | RN1102 |
California Micro Devices Corp |
Isolated Resistor Termination Network |
|
| 3 | RN1102 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1102MFV |
Toshiba |
Silicon NPN Transistor |
|
| 5 | RN1103 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 6 | RN1103MFV |
Toshiba |
Silicon NPN Transistor |
|
| 7 | RN1104 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 8 | RN1104MFV |
Toshiba |
Silicon NPN Transistor |
|
| 9 | RN1105 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 10 | RN1105MFV |
Toshiba |
Silicon NPN Transistor |
|
| 11 | RN1106 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 12 | RN1106MFV |
Toshiba |
Silicon NPN Transistor |
|