RJP30H1 - Renesas

RJP30H1 N-Channel IGBT

RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) .

Features

 Trench gate and thin wafer technology (G6H-II series)
 High speed switching: tr = 80 ns typ., tf = 150 ns typ.
 Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
 Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) C 4 12 3 G E Preliminary Datasheet R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedan.