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Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching R07DS0228EJ0100 Rev.1.00 Dec 14, 2010
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage tempe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK4006DPD |
Renesas |
Silicon N Channel MOS FET | |
2 | RJK4002DJE |
Renesas |
High Speed Power Switching | |
3 | RJK4002DPD |
Renesas |
MOSFET | |
4 | RJK4002DPH-E0 |
Renesas |
High Speed Power Switching | |
5 | RJK4002DPP-M0 |
Renesas |
High Speed Power Switching | |
6 | RJK4007DPP |
Renesas |
High Speed Power Switching | |
7 | RJK4007DPP-M0 |
Renesas |
High Speed Power Switching | |
8 | RJK4012DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK4013DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | RJK4014DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK4015DPK |
Renesas Technology |
High Speed Power Switching MOS FET | |
12 | RJK4018DPK |
Renesas |
High Speed Power Switching |