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Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
Low drive current
High speed switching R07DS1037EJ0100 Rev.1.00 Mar 18, 2013
Outline
RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251)
4 1. 2. 3. 4. Gate Drain Source Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK4002DPD |
Renesas |
MOSFET | |
2 | RJK4002DPP-M0 |
Renesas |
High Speed Power Switching | |
3 | RJK4002DJE |
Renesas |
High Speed Power Switching | |
4 | RJK4006DPD |
Renesas |
Silicon N Channel MOS FET | |
5 | RJK4006DPP-M0 |
Renesas |
High Speed Power Switching | |
6 | RJK4007DPP |
Renesas |
High Speed Power Switching | |
7 | RJK4007DPP-M0 |
Renesas |
High Speed Power Switching | |
8 | RJK4012DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK4013DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | RJK4014DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK4015DPK |
Renesas Technology |
High Speed Power Switching MOS FET | |
12 | RJK4018DPK |
Renesas |
High Speed Power Switching |