of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V)
R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain
S S S 1 2 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel tempera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK1051DPB |
Renesas |
N-Channel Power MOSFET | |
2 | RJK1052DPB |
Renesas |
N-Channel Power MOSFET | |
3 | RJK1053DPB |
Renesas |
N-Channel Power MOSFET | |
4 | RJK1055DPB |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | RJK1056DPB |
Renesas Technology |
Silicon N Channel Power MOS FET | |
6 | RJK1001DPN-E0 |
Renesas Technology |
N-Channel MOSFET | |
7 | RJK1002DPN-E0 |
Renesas Technology |
N-Channel MOS FET | |
8 | RJK1003DPN-E0 |
Renesas |
N-Channel MOSFET | |
9 | RJK1008DPE |
Renesas |
N-Channel Power MOSFET | |
10 | RJK1008DPN |
Renesas |
N-Channel Power MOSFET | |
11 | RJK1008DPP |
Renesas |
N-Channel Power MOSFET | |
12 | RJK1021DPE |
Renesas |
N-Channel Power MOSFET |