RJK1053DPB - Renesas

RJK1053DPB N-Channel Power MOSFET

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Features

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 High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0084EJ0102 (Previous: REJ03G1770-0101) Rev.1.02 Jul 30, 2010
 Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Application
 Switching Mode Power Supply www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current A.