RJK1028DNS - Renesas

RJK1028DNS N-Channel Power MOSFET

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Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free
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 R07DS0195EJ0300 Rev.3.00 Jan 30, 2012 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain www.DataSheet.co.kr S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channe.