RFP8P06LE - Intersil Corporation

RFP8P06LE P-Channel MOSFET

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstandin.

Features

• 8A, 60V
• rDS(ON) = 0.300Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature Ordering Information PART NUMBER RFD8P06LE RFD8P06LESM RFP8P06LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F8P6LE F8P6LE FP8P06LE Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD8P06LESM9A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-2.