RFP8P06E - Intersil Corporation

RFP8P06E P-Channel MOSFET

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 File Number 3937.5 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were .

Features

• 8A, 60V
• rDS(ON) = 0.300Ω
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP8P06E RFD8P06ESM RFD8P06E PACKAGE TO-220AB TO-252AA TO-251AA BRAND RFP8P06E D8P06E D8P06E S G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD8P06ESM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLAN.