RFP70N06 - Fairchild Semiconductor

RFP70N06 N-Channel Power MOSFET

Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switchin.

Features

• 70A, 60V
• rDS(on) = 0.014Ω
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1 RFP70N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP70N06 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS.