RFP70N03 - Intersil Corporation

RFP70N03 N-Channel Power MOSFET

RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed.

Features

• 70A, 30V
• rDS(ON) = 0.010Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP70N03 RF1S70N03SM PACKAGE TO-220AB TO-263AB BRAND RFP70N03 F1S70N03 Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE JEDEC TO-263AB DRAI.