RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of sil.
• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFG50N06LE RFP50N06LE RF1S50N06LESM PACKAGE TO-247 TO-220AB TO-263AB BRAND FG50N06L FP50N06L F50N06LE
Symbol
D
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NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06LESM9A.
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Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFP50N06 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | RFP50N06 |
Intersil Corporation |
N-Channel MOSFET | |
3 | RFP50N06 |
Harris |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | |
4 | RFP50N06 |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | RFP50N06 |
INCHANGE |
N-Channel MOSFET | |
6 | RFP50N05 |
Intersil Corporation |
N-Channel MOSFET | |
7 | RFP50N05L |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | RFP50N05L |
Intersil Corporation |
N-Channel MOSFET | |
9 | RFP5P12 |
GE Solid State |
(RFP5P12 / RFP5P15) P-channel enhancement-mode power field-effect transistor | |
10 | RFP5P15 |
GE Solid State |
(RFP5P12 / RFP5P15) P-channel enhancement-mode power field-effect transistor | |
11 | RFP-10-100RV |
Anaren Microwave |
Flanged Resistors | |
12 | RFP-10-50TV |
Anaren Microwave |
Flanged Terminations |