only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its.
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
Symbol
D
Ordering Information
PART NUMBER RFG50N05 RFP50N05 PACKAGE TO-247 TO-220AB BRAND RFG50N05 RFP50N05
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL)
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFG50N05, RFP50N05
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFP50N05L |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | RFP50N05L |
Intersil Corporation |
N-Channel MOSFET | |
3 | RFP50N06 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | RFP50N06 |
Intersil Corporation |
N-Channel MOSFET | |
5 | RFP50N06 |
Harris |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | |
6 | RFP50N06 |
ON Semiconductor |
N-Channel Power MOSFET | |
7 | RFP50N06 |
INCHANGE |
N-Channel MOSFET | |
8 | RFP50N06LE |
Intersil Corporation |
N-Channel MOSFET | |
9 | RFP5P12 |
GE Solid State |
(RFP5P12 / RFP5P15) P-channel enhancement-mode power field-effect transistor | |
10 | RFP5P15 |
GE Solid State |
(RFP5P12 / RFP5P15) P-channel enhancement-mode power field-effect transistor | |
11 | RFP-10-100RV |
Anaren Microwave |
Flanged Resistors | |
12 | RFP-10-50TV |
Anaren Microwave |
Flanged Terminations |