RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 File Number 4044.3 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic.
• 11A, 60V
• rDS(ON) = 0.107Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER RFD3055LE RFD3055LESM RFP3055LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F3055L
G
F3055L FP3055LE
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE D.
RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs The.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFP3055 |
Intersil Corporation |
N-Channel Power MOSFET | |
2 | RFP3055 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
3 | RFP30N06LE |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | RFP30N06LE |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | RFP30N06LE |
Harris |
N-Channel Enhancement-Mode Power MOSFETs | |
6 | RFP30P05 |
COMSET |
P-CHANNEL POWER MOSFETs | |
7 | RFP30P05 |
Intersil Corporation |
P-Channel Power MOSFET | |
8 | RFP30P05 |
Harris |
P-Channel Enhancement-Mode Power MOSFET | |
9 | RFP30P06 |
Intersil Corporation |
P-Channel Power MOSFET | |
10 | RFP3N45 |
Intersil Corporation |
N-Channel Power MOSFET | |
11 | RFP3N50 |
Intersil Corporation |
N-Channel Power MOSFET | |
12 | RFP-10-100RV |
Anaren Microwave |
Flanged Resistors |