RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 File Number 3648.2 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these p.
• 12A, 60V
• rDS(ON) = 0.150Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER RFD3055 RFD3055SM RFP3055 PACKAGE TO-251AA TO-252AA TO-220AB BRAND FD3055 FD3055 FP3055
G
S
NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE DRAIN GATE DRAIN (FLANGE) GA.
RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel en.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFP3055LE |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
2 | RFP3055LE |
Intersil Corporation |
N-Channel Power MOSFET | |
3 | RFP30N06LE |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | RFP30N06LE |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | RFP30N06LE |
Harris |
N-Channel Enhancement-Mode Power MOSFETs | |
6 | RFP30P05 |
COMSET |
P-CHANNEL POWER MOSFETs | |
7 | RFP30P05 |
Intersil Corporation |
P-Channel Power MOSFET | |
8 | RFP30P05 |
Harris |
P-Channel Enhancement-Mode Power MOSFET | |
9 | RFP30P06 |
Intersil Corporation |
P-Channel Power MOSFET | |
10 | RFP3N45 |
Intersil Corporation |
N-Channel Power MOSFET | |
11 | RFP3N50 |
Intersil Corporation |
N-Channel Power MOSFET | |
12 | RFP-10-100RV |
Anaren Microwave |
Flanged Resistors |