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only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its.
• 10A, 150V
• rDS(ON) = 0.300Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER RFP10N15 PACKAGE TO-220AB BRAND RFP10N15
G
S
NOTE: When ordering, include the entire part number.
Packaging
TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFP10N15
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP10N15 Drain to.
RFP10N15 - Harris Semiconductor
www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RFP10N12 |
GE Solid State |
(RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 2 | RFP10N12 |
Harris Semiconductor |
(RFP10N12 / RFP10N15) N-Channel Power MOSFET |
|
| 3 | RFP10N12L |
Harris Semiconductor |
(RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET |
|
| 4 | RFP10N12L |
GE Solid State |
(RFP10N12L / RFP10N15L) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 5 | RFP10N15L |
Harris Semiconductor |
(RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET |
|
| 6 | RFP10N15L |
GE Solid State |
(RFP10N12L / RFP10N15L) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 7 | RFP10P03L |
Harris |
P-Channel Power MOSFET |
|
| 8 | RFP10P03L |
Intersil Corporation |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
|
| 9 | RFP10P12 |
GE Solid State |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 10 | RFP10P15 |
Intersil Corporation |
-10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET |
|
| 11 | RFP10P15 |
GE Solid State |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 12 | RFP12N06 |
Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
|
