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RFP10N15 |
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| Part Number | RFP10N15 |
| Manufacturer | Intersil Corporation |
| Description | only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are cu... |
| Features |
• 10A, 150V • rDS(ON) = 0.300Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP10N15 PACKAGE TO-220AB BRAND RFP10N15 G S NOTE: When ordering, include the entire part number. Packaging TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP10N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10N15 Drain to... |
| Document |
 RFP10N15 Data Sheet
PDF 40.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RFP10N12 |
GE Solid State |
(RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 2 | RFP10N12 |
Harris Semiconductor |
(RFP10N12 / RFP10N15) N-Channel Power MOSFET |
|
| 3 | RFP10N12L |
Harris Semiconductor |
(RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET |
|
| 4 | RFP10N12L |
GE Solid State |
(RFP10N12L / RFP10N15L) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 5 | RFP10N15 |
GE Solid State |
(RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|