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RFD16N03LSM - Intersil Corporation

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RFD16N03LSM 16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs

RFD16N03L, RFD16N03LSM Data Sheet April 1999 File Number 4013.2 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were des.

Features


• 16A, 30V
• rDS(ON) = 0.025Ω
• Temperature Compensating PSPICE™ Model
• Can be Driven Directly from CMOS, NMOS, and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering InformationS PART NUMBER RFD16N03L RFD16N03LSM PACKAGE TO-251AA TO-252AA BRAND 16N03L 16N03L Symbol DRAIN NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A. GATE SOURCE Packaging JEDEC TO-25.

The same part from a different manufacturer

Datasheet RFD16N03LSM - Harris RFD16N03LSM

The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which u.

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