RFD16N02 - Intersil Corporation

RFD16N02 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET

The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and.

Features

• 16A, 20V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature Ordering Information PART NUMBER RFD16N02L RFD16N02LSM PACKAGE TO-251AA TO-252AA BRAND 16N02L 16N02L Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, e.g. RFD16N02LSM9A. G Formerly developmental type TA49243. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-252AA DRAIN .