RD2004JN - Sanyo

RD2004JN High-Speed Switching Diode

Ordering number : ENA1486 RD2004JN SANYO Semiconductors DATA SHEET RD2004JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. S.

Features

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• Diffused Junction Silicon Diode Low VF
• High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 400 20 Sine wave, 10ms 1pulse 180 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Electrical Characteristics at Ta=25.