RD2003JN - Sanyo

RD2003JN High-Speed Switching Diode

Ordering number : ENA1593 RD2003JN SANYO Semiconductors DATA SHEET RD2003JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=300V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. S.

Features

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• Diffused Junction Silicon Diode Low VF
• High-Speed Switching Diode High breakdown voltage (VRRM=300V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 300 20 25 50Hz sine wave 1 cycle 180 150 --55 to +150 Unit V A A A °C °C IO IF(RMS) IFSM Tj Tstg .