RCD100N20 - Rohm

RCD100N20 N-Channel MOSFET

RCD100N20 Nch 200V 10A Power MOSFET Datasheet Outline VDSS 200V CPT3 RDS(on) (Max.) 182m (SC-63) ID PD Features 1) Low on-resistance. 10A 85W Inner circuit (1) (2) (3) for 2) Fast switching speed. 3) Drive circuits can be simple. d 4) Parallel use is easy. e 5) Pb-free lead plating ; RoHS compliant d 6) 100% Avalanche tested en n.

Features

1) Low on-resistance. 10A 85W
Inner circuit (1) (2) (3) for 2) Fast switching speed. 3) Drive circuits can be simple. d 4) Parallel use is easy. e 5) Pb-free lead plating ; RoHS compliant d 6) 100% Avalanche tested en ns
Application m ig Switching Power Supply Automotive Motor Drive s Automotive Solenoid Drive om De
Absolute maximum ratings (Ta = 25°C) c Parameter Drain - Source voltage Re w Continuous drain current t e Pulsed drain current Tc = 25°C Tc = 100°C o N Gate - Source voltage NAvalanche energy, single pulse (1) Gate (2) Drain ∗1 (3) Source 1 BODY DIODE (1) (2).