RCD050N20 - Rohm

RCD050N20 Drive Nch MOSFET

Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Swi.

Features

1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0
 Application Switching
 Packaging specifications Package Code Basic ordering unit (pieces) RCD050N20 Type Taping TL 2500  www.DataSheet.co.kr
 Inner circuit ∗1
 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, D.