RB521S30T1G - ON Semiconductor

RB521S30T1G Schottky Barrier Diode

RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Feature.

Features

• Extremely Fast Switching Speed
• Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA
• Low Reverse Current
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA Peak Forward Surge Current (Note 1) IFSM 1.0 A ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding those listed i.