RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Ex.
RKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) Forward Voltage (IF = 200 mA) Symbol IR VF Min − − Typ − − Max 30.0 0.50 Unit mA Vdc 5Md 5M = Specific Device Code d = Date Code ORDERING INFORMATION Device RB521S30T1 RB521S30T5 Package SOD−523 SOD−523 Shipping† 4 mm Pitch 3000/Tape & Reel 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Indust.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB521S30T1G |
ON Semiconductor |
Schottky Barrier Diode | |
2 | RB521S30T5 |
ON Semiconductor |
Schottky Barrier Diode | |
3 | RB521S30T5G |
ON Semiconductor |
Schottky Barrier Diode | |
4 | RB521S30 |
NXP |
Schottky barrier rectifier | |
5 | RB521S30 |
Fairchild Semiconductor |
Schottky Barrier Diodes | |
6 | RB521S30 |
WillSEMI |
Schottky Barrier Diode | |
7 | RB521S30 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY DIODE | |
8 | RB521S30 |
UTC |
SCHOTTKY BARRIER DIODES | |
9 | RB521S30FN2 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY DIODES | |
10 | RB521S-30 |
JCET |
Schottky barrier Diode | |
11 | RB521S-30 |
Rohm |
Schottky barrier diode | |
12 | RB521S-30 |
JGD |
Silicon Epitaxial Planar Schottky Barrier Diode |